1 C4D10120E silicon carbide schottky diode z -r ec ? r ectifier features ? 1.2kv schottky rectifer ? zero reverse recovery current ? high-frequency operation ? temperature-independent switching behavior ? positive temperature coeffcient on v f benefts ? replace bipolar with unipolar rectifers ? essentially no switching losses ? higher effciency ? reduction of heat sink requirements ? parallel devices without thermal runaway applications ? solar inverters ? power factor correction package to-252-2 part number package marking C4D10120E to-252-2 c4d10120 pin 1 pin 2 case maximum ratings (t c =25c unless otherwise specifed) symbol parameter value unit test conditions note v rrm repetitive peak reverse voltage 1200 v v rsm surge peak reverse voltage 1300 v v dc dc blocking voltage 1200 v i f continuous forward current 33 16 10 a t c =25?c t c =135?c t c =155?c i frm repetitive peak forward surge current 47 31 a t c =25?c, t p =10 ms, half sine pulse t c =110?c, t p =10 ms, half sine pulse i fsm non-repetitive peak forward surge current 71 59 a t c =25?c, t p =10 ms, half sine pulse t c =110?c, t p =10 ms, half sine pulse i f,max non-repetitive peak forward current 750 620 a t c =25?c, t p =10 m s, pulse t c =110?c, t p =10 m s, pulse p tot power dissipation 170 74 w t c =25?c t c =110?c t j operating junction range -55 to +175 ?c t stg storage temperature range -55 to +135 ?c v rrm = 1200 v i f ( t c =135?c) = 16 a q c = 52 nc C4D10120E rev. c
2 electrical characteristics symbol parameter typ. max. unit test conditions note v f forward voltage 1.5 2.2 1.8 3 v i f = 10 a t j =25c i f = 10 a t j =175c i r reverse current 30 55 250 350 a v r = 1200 v t j =25c v r = 1200 v t j =175c q c total capacitive charge 52 nc v r = 800 v, i f = 10a d i /d t = 200 a/ s t j = 25c c total capacitance 754 45 38 pf v r = 0 v, t j = 25c, f = 1 mhz v r = 400 v, t j = 25?c, f = 1 mhz v r = 800 v, t j = 25?c, f = 1 mhz note: 1. this is a majority carrier diode, so there is no reverse recovery charge. thermal characteristics symbol parameter typ. unit r jc to-252 package thermal resistance from junction to case 0.88 c/w typical performance figure 1. forward characteristics 0 2 4 6 8 10 12 14 16 18 20 0 0.5 1 1.5 2 2.5 3 3.5 4 figure 2. reverse characteristics 0 1 2 3 4 5 0 500 1000 1500 2000 i f (a) v f (v) i r (ma) v r (v) t j =-55c t j = 25c t j = 75c t j =125c t j =175c t j =-55c t j = 25c t j = 75c t j =125c t j =175c C4D10120E rev. c
3 0 10 20 30 40 50 60 70 80 25 50 75 100 125 150 175 50 60 70 80 90 100 110 120 peak forward current (a) C4D10120E current derating 0 10 20 30 40 50 25 50 75 100 125 150 175 i f(peak) peak forward current (a) tc case temperature ( c) figure 3. current derating 0.0 20.0 40.0 60.0 80.0 100.0 120.0 140 . 0 160.0 180.0 25 50 75 100 125 150 175 typical performance 0 100 200 300 400 500 600 700 800 0.1 1 10 100 1000 figure 4. power derating figure 5. recovery charge vs. reverse voltage figure 6. capacitance vs. reverse voltage i f(peak) (a) t c ?c p tot (w) t c ?c c (pf) v r (v) 0 10 20 30 40 50 60 70 0 200 400 600 800 1000 v r (v) qrr (nc) 10% duty 20% duty 30% duty 50% duty 70% duty dc C4D10120E rev. c
4 typical performance 0.0001 0.001 0.01 0.1 1 1e - 6 10e - 6 100 e - 6 1e - 3 10e - 3 100e - 3 1 10 figure 7. transient thermal impedance thermal resistance (?c/w) t (sec) diode model v ft = v t +if*r t v t = 0.98+(t j * -1.71*10 -3 ) r t = 0.040+(t j * 5.32*10 -4 ) note: t j = diode junction temperature in degrees celsius, valid from 25c to 175c v t r t diode model csd04060 vf t = v t + if*r t v t= 0.965 + (t j * - 1.3*10 - 3 ) r t= 0.096 + (t j * 1.0 6 *10 - 3 ) C4D10120E rev. c
5 recommended solder pad layout part number package marking C4D10120E to-252-2 c4d10120 to-252-2 . 08 pos inches millimeters min max min max a .250 .289 6.350 7.341 b .197 .215 5.004 5.461 c .027 .050 .686 1.270 d* .270 .322 6.858 8.179 e .178 .182 4.521 4.623 f .025 .045 .635 1.143 g 44? 46? 44? 46? h .380 .410 9.652 10.414 j .090 typ 2.286 typ k 6? 8? 6? 8? l .086 .094 2.184 2.388 m .018 .034 .457 .864 n .035 .050 .889 1.270 p .231 .246 5.867 6.248 q 0.00 .005 0.00 .127 r r0.010 typ r0.254 typ s .017 .023 .432 .584 t .038 .045 .965 1.143 u .021 .029 .533 .737 package dimensions package to-252-2 note: * tab d may not be present * note: recommended soldering profles can be found in the applications note here: http://www.cree.com/power_app_notes/soldering C4D10120E rev. c
6 6 C4D10120E rev. c copyright ? 2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo, and zero recovery are registered trademarks of cree, inc. cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5451 www.cree.com/power ? rohs compliance the levels of rohs restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with eu directive 2011/65/ec (rohs2), as implemented january 2, 2013. rohs declarations for this product can be obtained from your cree representative or from the product documentation sections of www.cree.com. ? reach compliance reach substances of high concern (svhcs) information is available for this product. since the european chemi - cal agency (echa) has published notice of their intent to frequently revise the svhc listing for the foreseeable future,please contact a cree representative to insure you get the most up-to-date reach svhc declaration. reach banned substance information (reach article 67) is also available upon request. ? this product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defbrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffc control systems. notes
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